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BDW42 Arkusz danych(PDF) 2 Page - Savantic, Inc. |
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BDW42 Arkusz danych(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BDW42 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB=10mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=50mA 3.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 3.0 V ICBO Collector cut-off current VCB=100V, IE=0 1.0 mA ICEO Collector cut-off current VCE=50V, IB=0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 1000 hFE-2 DC current gain IC=10A ; VCE=4V 250 fT Transition frequency IC=3A ; VCE=3V;f=1MHz 4.0 MHz COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 200 pF |
Podobny numer części - BDW42 |
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Podobny opis - BDW42 |
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