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BDW51C Arkusz danych(PDF) 2 Page - Savantic, Inc.

Numer części BDW51C
Szczegółowy opis  Silicon NPN Power Transistors
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Producent  SAVANTIC [Savantic, Inc.]
Strona internetowa  http://www.svntc.com
Logo SAVANTIC - Savantic, Inc.

BDW51C Arkusz danych(HTML) 2 Page - Savantic, Inc.

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SavantIC Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BDW51C
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
100
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=2.5A
3.0
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2.5A
2.5
V
VBE
Base-emitter on voltage
IC=5A ; VCE=4V
1.5
V
ICEO
Collector cut-off current
VCE=50V; IB=0
1.0
mA
ICBO
Collector cut-off current
VCB=100V; IE=0
TC=150
0.5
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
mA
hFE-1
DC current gain
IC=5A ; VCE=4V
20
150
hFE-2
DC current gain
IC=10A ; VCE=4V
5
fT
Transition frequency
IC=0.5A ; VCE=4V
3
MHz


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