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1 / 1 page TIP31C DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter TO-220AB Dimensions in inches and (millimeters) .625(15.87) .570(14.48) .562(14.27) .500(12.70) .055(1.39) .045(1.15) .185(4.70) .173(4.40) .405(10.28) .380(9.66) .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 (2.54) Typ .024(0.60) .014(0.35) Φ.151 Φ(3.83) Typ 1 2 3 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 3 A Total Power Dissipation(TC=25oC) PD 40 W Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 100 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA, IB=0 Collector Cutoff Current ICES - - 200 µA VCE=100V, IB=0 ICEO - - 300 µA VCE=60V, IB=0 Emitter Cutoff Current IEBO - - 1 mA VEB=5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1.2 V IC=3A, IB=375mA Base-Emitter On Voltage(1) VBE(on) - - 1.8 V IC=3A, VCE=4V DC Current Gain(1) hFE1 25 - - - IC=1A, VCE=4V hFE2 10 - 50 - IC=3A, VCE=4V Transition Frequency fT 3 - - MHz IC=0.5A, VCE=10V, f=1MHz Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
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