SI4164DY datasheet(1/7 Pages) VISHAY

Numer części	SI4164DY

Szczegółowy opis	N-Channel 30-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4164DY

New Product

Document Number: 68870

S-82015-Rev. A, 01-Sep-08

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

APPLICATIONS

•

DC/DC Conversion

- Low-Side Switch

•

Notebook PC

•Gaming

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.0032 at VGS = 10 V

30

26.5 nC

0.0039 at VGS = 4.5 V

26.3

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4164DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

30

A

TC = 70 °C

22.6

TA = 25 °C

21.5b, c

TA = 70 °C

17.1b, c

Pulsed Drain Current

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

5.4

TA = 25 °C

2.7b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

40

Avalanche Energy

EAS

80

mJ

Maximum Power Dissipation

TC = 25 °C

PD

6.0

W

TC = 70 °C

3.3

TA = 25 °C

3.0b, c

TA = 70 °C

1.9b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

33

42

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

16

21

RoHS

COMPLIANT

Podobny numer części - SI4164DY

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Telefunken	SI4164DY	275Kb / 10P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4164DY-T1-GE3	240Kb / 9P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4164DY	240Kb / 9P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022

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