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BC327 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Numer części BC327
Szczegółowy opis  PNP General PurposeTransistor
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Producent  SECOS [SeCoS Halbleitertechnologie GmbH]
Strona internetowa  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC327 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
BC327/BC328
PNP General PurposeTransistor
http://www.SeCoSGmbH.com
Elektronische Bauelemente
FEATURES
Power dissipation
PCM : 0.625
W
(Tamb=25℃)
Collector current
ICM
:
-0.8
A
Collector-base voltage
V(BR)CBO : BC327 -50
V
Operating and storage junction temperature range
TJ
,Tstg:-55℃ to +150℃
1 2
TO-92
1. COLLECTOR
2. BASE
.
EMITTER
1
2
3
3
3
.
BC328 -30
ELECTRICAL
CHARACTERISTICS (Tamb=25
unless
otherwise
specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
BC327
BC328
VCBO
Ic= -100µA , IE=0
-50
-30
V
V
Collector-emitter breakdown voltage
BC327
BC328
VCEO
IC= -10 mA , IB=0
-45
-25
V
V
Emitter-base breakdown voltage
VEBO
IE= -10µA, IC=0
-5
V
Collector cut-off current
BC327
BC328
ICBO
VCB= -45V, IE=0
VCB= -25V, IE=0
-0.1
-0.1
µA
µA
Collector cut-off current
BC327
BC328
ICEO
VCE= -40V, IB=0
VCE= -20 V, IB=0
-0.2
-0.2
µA
µA
Emitter cut-off current
IEBO
VEB= -4 V, IC=0
-0.1
µA
hFE(1)
VCE=-1V, IC= -100mA
100
630
DC current gain
hFE(2)
VCE=-1V, IC= -300mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=-500 mA, IB= -50 mA
-0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= -500 mA, IB=-50 mA
-1.2
V
Transition frequency
f T
VCE= -5V, IC= -10mA
f = 100MHz
260
MHz
hFE CLASSIFICATION
Classification
16
25
40
hFE1
100-250
160-400
250-630
hFE2
60-
100-
170-
01-Jun-2002 Rev. A
Page 1 of 3
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


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