BC640 datasheet(1/2 Pages) SECOS

Numer części	BC640

Szczegółowy opis	PNP Type Plastic Encapsulate Transistors

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Producent	SECOS [SeCoS Halbleitertechnologie GmbH]

Strona internetowa	http://www.secosgmbh.com

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1 / 2 page

-Jun-2002 Rev. A

Page 1 of

2

01

Elektronische Bauelemente

BC636/638/640

PNP Type

Power Dissipation:

PCM: 0.83 mW (Tamb=25 C)

PARAMETERS

SYMBOL

TEST CONDITIONS

UNIT

Collector - emitter breakdown voltage

Collector - emitter saturation voltage

Base - emitter voltage

Transition frequency

Collector cut-off current

Emitter cut-off current

DC current gain

o

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified)

V(BR)CEO

VCE(sat)

VBE(ON)

f T

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

BC636

BC636-10

IC=10mA, IB=0

VCB=-30V, IE=0

VCE=-2V, IC=-5mA

VCE=-2V, IC=-150mA

VCE=-2V, IC=-500mA

IC=-500mA, IB=-50mA

VCE=-2V, IC=-500mA

VCE=-5V, IC=-50mA, f=100MHz

VEB=-5V, IB=0

BC638

BC636-16, BC638-16, BC640-16

BC636-10

63-160

100-250

BC636-16, BC638-16, BC640-16

BC640

V

TYP

100

MAX

-0.1

-0.5

-1

160

250

MIN

-45

-60

-80

40

63

100

25

V

MHz

µA

RANK

RANGE

CLASSIFICATION OF hFE(2)

BC636

BC638

BC640

BC636

BC638

BC640

o

MAXIMUM RATINGS

FEATURE

(TA=25 C unless otherwise specified)

PARAMETERS

SYMBOLS

VALUES

UNIT

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Thermal Resistance from Junction to Ambient

o

VCEO

VCBO

VEBO

IC

IB

ICP

RθJA*

TJ,TSTG

V

A

mA

K/w

C

o

-45

-60

-80

-45

-60

-100

-5

-1

-1.5

100

150

150, -65 ~ 150

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Plastic Encapsulate Transistors

4.55±0.2

3.5±0.2

2.54±0.1

(1.27 Typ.)

0.46

+0.1

–0.1

0.43

+0.08

–0.07

13

2

1: Emitter

3: Base

2: Collector

1.25–0.2

+0.2

TO-92

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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