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Dated : 13/02/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BC817W / BC818W
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 500 mA
-16W
-25W
-40W
hFE
hFE
hFE
hFE
100
160
250
40
250
400
600
-
-
-
-
-
Collector Base Breakdown Voltage
at IC = 10 µA
BC817W
BC818W
V(BR)CBO
50
30
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
BC817W
BC818W
V(BR)CEO
45
25
-
-
V
Emitter Base Breakdown Voltage
at IE= 10 µA
V(BR)EBO
5
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCEsat
-
0.7
V
Base Emitter Voltage
at IC = 500 mA, VCE = 1 V
VBE
-
1.2
V
Collector Cutoff Current
at VCB = 20 V
at VCB = 20 V, TJ = 150 OC
ICBO
-
-
100
5
nA
µA
Emitter Cutoff Current
at VEB = 5 V
IEBO
-
100
nA
Transition Frequency
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100
-
MHz
Collector Capacitance
at VCB = 10 V, f = 1 MHz
Cc
-
5
pF