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Dated : 07/04/2009
SEMTECH ELECTRONICS LTD.
(
Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
1N4448WT
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
80
V
Average Rectified Output Current
IO
125
mA
Forward Continuous Current
IFM
250
mA
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
IFSM
0.5
A
Power Dissipation
Pd
150
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Tstg
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 10 mA
at IF = 100 mA
at IF = 150 mA
VF
0.62
-
-
-
0.72
0.855
1
1.25
V
Reverse Leakage Current
at VR = 80 V
at VR = 20 V
at VR = 75 V, TJ = 150 OC
at VR = 25 V, TJ = 150 OC
IR
-
-
-
-
100
25
50
30
nA
nA
µA
µA
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
80
-
V
Capacitance
at VR = 0.5 V, f = 1 MHz
Ctot
-
4
pF
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω
trr
-
4
ns
Anode
2
Top View
Marking Code: "A"
Simplified outline SOD-523 and symbol
1
A
2
PINNING
1
PIN
Cathode
DESCRIPTION
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