Dated : 19/12/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BC807 / BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups
-16, -25 and -40, according to their current gain.
As complementary types the NPN transistors BC817
and BC818 are recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
BC807
BC808
-VCBO
50
30
V
Collector Emitter Voltage
BC807
BC808
-VCEO
45
25
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
500
mA
Power Dissipation
Ptot
200
mW
Thermal Resistance Junction to Ambient Air
RθJA
500
K/W
Junction Temperature
TJ
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Electrical Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Current Gain Group
at -VCE = 1 V, -IC = 500 mA
-16
-25
-40
hFE
hFE
hFE
hFE
100
160
250
40
-
-
-
-
250
400
600
-
-
-
-
-
Collector Base Cutoff Current
at -VCB = 20 V
-ICBO
-
-
100
nA
Emitter-Base Cutoff Current
at -VEB = 5 V
-IEBO
-
-
100
nA
Collector Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCEsat
-
-
0.7
V
Base-Emitter Voltage
at -IC = 500 mA, -VCE = 1 V
-VBE(on)
-
-
1.2
V
Gain -Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 50 MHz
fT
80
-
-
MHz
Collector-Base Capacitance
at -VCB = 10 V, f = 1 MHz
CCBO
-
9
-
pF
SOT-23 Plastic Package
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