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NBXDBA018LN1TAG Arkusz danych(PDF) 4 Page - ON Semiconductor |
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NBXDBA018LN1TAG Arkusz danych(HTML) 4 Page - ON Semiconductor |
4 / 7 page NBXDBB018, NBXDBA018 http://onsemi.com 4 Table 7. AC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency FSEL = HIGH 155.52 MHz FSEL = LOW 311.04 Df Frequency Stability − NBXDBB018 − NBXDBA018 0°C to +70°C −40°C to +85°C (Note 4) ±20 ±50 ppm FNOISE Phase−Noise Performance fCLKout = 155.52 MHz/311.04 MHz (See Figures 3 and 4) 100 Hz of Carrier −105/−102 dBc/Hz 1 kHz of Carrier −122/−115 dBc/Hz 10 kHz of Carrier −129/−122 dBc/Hz 100 kHz of Carrier −129/−122 dBc/Hz 1 MHz of Carrier −137/−131 dBc/Hz 10 MHz of Carrier −160/−156 dBc/Hz tjit(F) RMS Phase Jitter 12 kHz to 20 MHz 0.4 0.9 ps tjitter Cycle to Cycle, RMS 1000 Cycles 2 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 13 30 ps Period, RMS 10000 Cycles 1 4 ps Period, Peak−to−Peak 10000 Cycles 9 20 ps tOE/OD Output Enable/Disable Time 200 ns tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 48 50 52 % tR Output Rise Time (20% and 80%) 250 400 ps tF Output Fall Time (80% and 20%) 250 400 ps tstart Startup Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. 4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging. |
Podobny numer części - NBXDBA018LN1TAG |
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Podobny opis - NBXDBA018LN1TAG |
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