BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC856

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

–0.8

–1.0

–0.6

–0.2

–0.4

1.0

2.0

–0.1

–1.0

–10

–200

–0.2

0.2

0.5

–0.2

–1.0

–10

–200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = –5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

–1.0

–1.2

–1.6

–2.0

–0.02

–1.0

–10

0

–20

–0.1

–0.4

–0.8

–0.2

–2.0

–10

–200

–1.0

TJ = 25°C

IC =

–10 mA

VCE = –5.0 V

TA = 25°C

0

–0.5

–2.0

–5.0

–20

–50

–100

–0.05

–0.2

–0.5

–2.0

–5.0

–100 mA

–20 mA

–1.4

–1.8

–2.2

–2.6

–3.0

–0.5

–5.0

–20

–50

–100

–55

°C to 125°C

θVB for VBE

–2.0 –5.0

–20

–50 –100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 12. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mA)

–0.1 –0.2

–1.0

–50

2.0

–2.0

–10

–100

100

200

500

50

20

20

10

6.0

4.0

–1.0

–10

–100

VCE = –5.0 V

–0.5

–5.0

–20

TJ = 25°C

Cob

Cib

8.0

–50 mA

–200 mA