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TPIC2601 Arkusz danych(PDF) 3 Page - Texas Instruments |
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TPIC2601 Arkusz danych(HTML) 3 Page - Texas Instruments |
3 / 10 page TPIC2601 6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY SLIS048A – NOVEMBER 1996 – REVISED JANUARY 1998 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 source-to-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr(SD) Reverse-recovery time IS = 1 A, VGS 0 VDS = 48 V, di/dt 100 A/ µs 72 ns Q Total diode charge VGS = 0, di/dt = 100 A/ µs, 180 nC QRR Total diode charge See Figures 1 and 14 180 nC resistive-load switching characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) Delay time, VGS↑ to VDS↓ turn on 194 td(off) Delay time, VGS↓ to VDS↑ turn off VDD = 25 V, RL = 25 Ω,ten = 10 ns, 430 ns tr Rise time, VDS DD , tdis = 10 ns, L , See Figure 2 en , 90 ns tf Fall time, VDS 180 Qg Total gate charge V48 V I1 A V10 V 5.1 6.4 Qgs(th) Threshold gate-to-source charge VDD = 48 V, See Figure 3 ID = 1 A, VGS = 10 V, 0.5 0.63 nC Qgd Gate-to-drain charge See Figure 3 2.75 3.4 LD Internal drain inductance 5 nH LS Internal source inductance 5 nH Rg Internal gate resistance 500 Ω thermal resistance PARAMETER TEST CONDITIONS MIN TYP MAX UNIT R θJA Junction-to-ambient thermal resistance All outputs with equal power 72 R θJC Junction-to-case thermal resistance All outputs with equal power 4 °C/W R θJC Junction-to-case thermal resistance One output dissipating power 7 |
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