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BD166 Arkusz danych(PDF) 1 Page - Motorola, Inc

Numer części BD166
Szczegółowy opis  Plastic Medium Power Silicon PNP Transistor
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Producent  MOTOROLA [Motorola, Inc]
Strona internetowa  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BD166 Arkusz danych(HTML) 1 Page - Motorola, Inc

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Motorola Bipolar Power Transistor Device Data
Plastic Medium Power Silicon
PNP Transistor
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
• BD166 is complementary with BD165
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
45
Vdc
Collector–Base Voltage
VCBO
45
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.5
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.25
10
Watts
mW/
_C
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
20
160
Watts
mW/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
6.25
_C/W
Thermal Resistance, Junction to Ambient
θJA
100
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
V(BR)CEO
45
Vdc
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
DC Current Gain
(IC = 0. 15 A, VCE = 2.0 V)
(IC = 0.5 A, VCE = 2.0 V)
hFE
40
15
Collector–Emitter Saturation Voltage*
(IC = 0.5 Adc, IB = 0.05 Adc)
VCE(sat)
0.5
Vdc
Base–Emitter On Voltage*
(IC = 0.5 Adc, VCE = 2.0 Vdc)
VBE(on)
0.95
Vdc
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 2.0 Vdc,
f = 1.0 MHz)
fT
6.0
MHz
* Pulse Test: Pulse Width
x 300 µs, Duty Cycle x 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD166/D
© Motorola, Inc. 1995
BD166
1.5 AMPERE
POWER TRANSISTOR
PNP SILICON
45 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
REV 7


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