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BD166 Arkusz danych(PDF) 1 Page - Motorola, Inc |
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BD166 Arkusz danych(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Bipolar Power Transistor Device Data Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD166 is complementary with BD165 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TA = 25_C Derate above 25 _C PD 1.25 10 Watts mW/ _C Total Device Dissipation @ TC = 25_C Derate above 25 _C PD 20 160 Watts mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 6.25 _C/W Thermal Resistance, Junction to Ambient θJA 100 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) V(BR)CEO 45 — Vdc Collector Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO — 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc DC Current Gain (IC = 0. 15 A, VCE = 2.0 V) (IC = 0.5 A, VCE = 2.0 V) hFE 40 15 — — Collector–Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat) — 0.5 Vdc Base–Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on) — 0.95 Vdc Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 2.0 Vdc, f = 1.0 MHz) fT 6.0 — MHz * Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD166/D © Motorola, Inc. 1995 BD166 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS CASE 77–08 TO–225AA TYPE REV 7 |
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