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2SC4448 Arkusz danych(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4448 Arkusz danych(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon Power Transistors 2SC4448 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=50mA IB=5mA 1.0 V VBEsat Base-emitter saturation voltage IC=50mA IB=5mA 1.0 V ICBO Collector cut-off current VCB=200V IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=10mA ; VCE=10V 40 200 hFE-2 DC current gain IC=100mA ; VCE=10V 20 fT Transition frequency IC=40mA ; VCE=10V 240 MHz COB Collector output capacitance f=1MHz;VCB=30V 3.3 pF |
Podobny numer części - 2SC4448 |
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Podobny opis - 2SC4448 |
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