STFW3N150 datasheet(4/16 Pages) STMICROELECTRONICS

Numer części	STFW3N150

Szczegółowy opis	N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET

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Producent	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STFV3N150, STFW3N150, STP3N150, STW3N150

4/16

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

1500

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

10

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 30 V

± 100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 1.3 A

6

9

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 30 V, ID = 1.3 A

2.6

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

939

102

13.2

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS=0 to 1200 V, VGS = 0

100

pF

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

4

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 1200 V, ID = 2.5 A,

VGS = 10 V

(see Figure 19)

29.3

4.6

17

nC

Podobny numer części - STFW3N150

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STFW3N150	765Kb / 15P	N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
STMicroelectronics	STFW3N150	677Kb / 22P	N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages DS5052 - Rev 12 - May 2020
Inchange Semiconductor ...	STFW3N150	347Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STFW3N150	765Kb / 15P	N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
STMicroelectronics	STFW3N150	677Kb / 22P	N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages DS5052 - Rev 12 - May 2020

More results

Podobny opis - STFW3N150

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STFW3N150	765Kb / 15P	N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
STMicroelectronics	STFW4N150	762Kb / 15P	N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF
Kersemi Electronic Co.,...	KSMU5N60C	3Mb / 8P	N-Channel MOSFET 600 V, 2.8 A, 2.5 廓
Kersemi Electronic Co.,...	KSMD5N60C	3Mb / 8P	N-Channel MOSFET 600 V, 2.8 A, 2.5 廓
STMicroelectronics	STFV4N150	459Kb / 16P	N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF
Fairchild Semiconductor	FQI5N60CTU	487Kb / 8P	N-Channel QFET짰 MOSFET 600 V, 4.5 A, 2.5 廓
Fairchild Semiconductor	FQPF6N80CT	1,018Kb / 10P	N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5 廓
STMicroelectronics	STFW3N150	677Kb / 22P	N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages DS5052 - Rev 12 - May 2020
Fairchild Semiconductor	FDMS8020	263Kb / 7P	N-Channel PowerTrench짰 MOSFET 30 V, 42 A, 2.5 m廓
Fairchild Semiconductor	FDMS86500L	283Kb / 7P	N-Channel PowerTrench짰 MOSFET 60 V, 80 A, 2.5 m廓

More results

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