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FDD8426H Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDD8426H Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 11 page ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDD8426H Rev.C Electrical Characteristics T J = 25°C unless otherwise noted Drain-Source Diode Characteristics Notes: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, N-ch: L = 1 mH, IAS = 15 A, VDD =36 V, VGS = 10 V; P-ch: L = 1 mH, IAS = -18 A, VDD = -36 V, VGS = -10 V. Symbol Parameter Test Conditions Type Min Typ Max Units VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 12 A (Note 2) VGS = 0 V, IS = -10 A (Note 2) Q1 Q2 0.8 -0.8 1.2 -1.2 V trr Reverse Recovery Time Q1 IF = 12 A, di/dt = 100 A/µs Q2 IF = -10 A, di/dt = 100 A/µs Q1 Q2 22 25 35 40 ns Qrr Reverse Recovery Charge Q1 Q2 11 14 20 22 nC a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 96 °C/W when mounted on a minimum pad of 2 oz copper b. 96 °C/W when mounted on a minimum pad of 2 oz copper Q1 Q2 a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper |
Podobny numer części - FDD8426H |
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Podobny opis - FDD8426H |
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