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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FDS6688AS Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDS6688AS Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  FDS6688AS Rev C Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 1 0 mA, Referenced to 25°C 2 0 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.5 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 1 0 mA, Referenced to 25°C – 4 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.2 A VGS=10 V, ID =14.5A, TJ=125°C 4.5 5.9 6.7 6.0 7.3 8.5 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 14.5 A 66 S Dynamic Characteristics Ciss Input Capacitance 2510 pF Coss Output Capacitance 710 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 270 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 2.8 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 43 69 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 29 46 ns td(on) Turn–On Delay Time 17 31 ns tr Turn–On Rise Time 22 35 ns td(off) Turn–Off Delay Time 34 54 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 29 46 ns Qg(TOT) Total Gate Charge at Vgs=10V 45 63 nC Qg Total Gate Charge at Vgs=5V 25 35 nC Qgs Gate–Source Charge 7 nC Qgd Gate–Drain Charge VDD = 15 V, ID = 14.5 A, 8 nC |
Podobny numer części - FDS6688AS |
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Podobny opis - FDS6688AS |
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