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FDS8842NZ Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDS8842NZ Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page www.fairchildsemi.com 4 ©2009 Fairchild Semiconductor Corporation FDS8842NZ Rev.C Figure 7. 0 10 203040 5060 0 2 4 6 8 10 Qg, GATE CHARGE (nC) ID = 14.9 A VDD = 15 V VDD = 20 V VDD = 25 V Gate Charge Characteristics Figure 8. 0.1 1 10 40 100 1000 5000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure 9. 0.001 0.01 0.1 1 10 100 1000 1 TJ = 100 oC TJ = 125 oC 10 TJ = 25 oC t AV, TIME IN AVALANCHE (ms) 30 Unclamped Inductive Switching Capability Figure 10. Igss vs Vgs 0 5 10 15 20 25 30 10 -9 10 -7 10 -5 10 -3 VGS = 0 V TJ = 25 oC TJ = 125 oC VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 10 ms DC 10 s 1 s 100 ms 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC 200 Figure 12. Single Pulse Maximum Power Dissipation 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 2000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC V GS = 10 V t, PULSE WIDTH (sec) Typical Characteristics T J = 25 °C unless otherwise noted |
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