TPCF8402 datasheet(9/11 Pages) TOSHIBA

Numer części	TPCF8402

Szczegółowy opis	Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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9 / 11 page

TPCF8402

2009-09-29

9

N-channel

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

0

0.1

Common source

Ta

= 25°C

Pulse test

-0.2

0.3

0.5

1

3

5

10

-0.6

-0.8

-1.2

VGS = 0 V

5.0

3.0

1.0

10

-0.4

-1.0

160

−40

0

40

80

120

−80

Common source

Pulse test

120

80

40

0

ID = 4A

2A

VGS = 10V

VGS = 4.5V

ID = 4, 2, 1A

1A

100

60

20

Drain-source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Vth – Ta

0

1

3

−80

−40

0

40

80

120

160

Common source

VDS = 10 V

ID = 1mA

Pulse test

2

0.1

1

10

100

1000

1

3

5

10

30 50

100

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

0.3

Ambient temperature Ta (°C)

PD – Ta

2.0

0.8

0

40

80

120

160

0.4

1.2

1.6

200

Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single-device value at dual operation (Note 3b)

ｔ＝

5s

(1)

(2)

(3)

(4)

total gate charge Qg (nC)

Dynamic input/output

characteristics

0

4

8

Common source

ID = 4.0A

Ta

= 25°C

Pulse test

VDD = 24V

VDS

VGS

12

16

20

10

0

15

10

0

5

15

12

6

24

12

VDD = 6V

5

30

25

Podobny numer części - TPCF8402

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Toshiba Semiconductor	TPCF8402	274Kb / 11P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
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Podobny opis - TPCF8402

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TPCF8402 Arkusz danych(PDF) 9 Page - Toshiba Semiconductor

TPCF8402 Arkusz danych(HTML) 9 Page - Toshiba Semiconductor

Podobny numer części - TPCF8402

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