BD130 datasheet(2/3 Pages) COMSET

Numer części	BD130

Szczegółowy opis	NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

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Producent	COMSET [Comset Semiconductor]

Strona internetowa	http://comset.halfin.com

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COMSET SEMICONDUCTORS

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BD130

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance, Junction to Case

1.55

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(BR)

Collector-Emitter

Breakdown Voltage (*)

IC=200 mA, IB=0

60

V

VCE(SAT)

Collector-Emitter Saturation

Voltage (*)

IC=4 A, IB=0.4 A

-0.5

1.1

V

VCE=100 V

VBE=-1.5 V

--

0.5

ICEX

Collector-Emitter Cutoff

Current

VCE=100 V

VBE=-1.5 V

TCASE=150°C

--

30

mA

IEBO

Emitter-Base Cutoff Current

VEB=7 V

--

5.0

mA

VBE

Base-Emitter Voltage (*)

IC=4.0 A, VCE=4.0V

-

0.95

1.8

V

fT

Transition Frequency

IC=0.1 A, VCE=4 V

1.1

MHz

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Podobny opis - BD130

Producent	Numer części	Arkusz danych	Szczegółowy opis
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Wing Shing Computer Com...	BUT11	22Kb / 1P	NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS)
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