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BDW84C Arkusz danych(PDF) 1 Page - Comset Semiconductor

Numer części BDW84C
Szczegółowy opis  PNP SILICON DARLINGTONS POWER TRANSISTORS
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Producent  COMSET [Comset Semiconductor]
Strona internetowa  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BDW84C Arkusz danych(HTML) 1 Page - Comset Semiconductor

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PNP BDW84C
COMSET SEMICONDUCTORS
1/2
The BDW84C is silicon epitaxial-base PNPpower monolithic Darlington transistor mounted in Jedec
TO-218 plastic package.
It is intended for use in power linear and switching applications.
The complementary is BDW83C.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
-VCEO
Collector-Emitter Voltage
-IB = 0
100
V
-VCBO
Collector- Emitter Voltage
-IE = 0
100
V
-VEBO
Emitter-Base Voltage
-IC = 0
5
V
-IC
Collector Current
15
A
-ICM
Collector Peak Current
tp = 10ms
40
A
-IB
Base Current
0.5
A
Pt
Total Power Dissipation
@ TC = 40°
130
Watts
TJ
Junction Temperature
150
°C
TStg
Storage Temperature
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJC
Thermal Resistance, Junction to Case
0.96
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
-VCEO(SUS)
Collector-Emitter
Sustaining Voltage (1)
-IC=30 mA
100
-
-
V
-ICEO
Collector Cutoff Current
-VCE=40 V , -IB=0
-
-
1
mA
-VCE= 100V , -IE= 0
-
-
0.5
-ICBO
Collector Cutoff Current
-VCE= 100 V , -IE= 0, Tcase = 150°C
-
-
5
mA
-IEBO
Emitter Cutoff Current
-VEB=5.0 V, -IC=0
-
-
2
mA
-IC=6 A , -VCE=3.0 V
750
-
20 K
hFE
DC Current Gain (1)
-IC=15 A , -VCE=3.0 V
100
-
-
-
-IC=6 A , -IB=12 mA
-
-
2.5
-VCE(SAT)
Collector-Emitter
saturation Voltage (1)
-IC=15 A , -IB=150 mA
-
-
4
-VBE(on)
Base-Emitter Voltage (1)
-IC=6 A , -IB=3 A
-
-
2.5
V
-Vf
Diode Forward Voltage (1)
-IF = 10A
-
-
4
V
P
PN
NP
P S
SIIL
LIIC
CO
ON
N D
DA
AR
RL
LIIN
NG
GT
TO
ON
NS
S P
PO
OW
WE
ER
R
T
TR
RA
AN
NS
SIIS
ST
TO
OR
RS
S


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