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CS684TO3 Arkusz danych(PDF) 1 Page - Comset Semiconductor |
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CS684TO3 Arkusz danych(HTML) 1 Page - Comset Semiconductor |
1 / 2 page CS684 TO3 COMSET SEMICONDUCTORS 1 PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. Compliance to RoHS. CS684 is the BD684 in TO3 package. PNP SILICON DARLINGTON POWER TRANSISTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 140 V -VCBO Collector-Base Voltage 140 V -VEBO Emitter-Base Voltage 5 V -IC 4 -IC Collector Current -ICM 6 A -IB Base current (peak value) -IBM 0.1 A PT Total power Dissipation @ Tmb = 25°C 65 Watts TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-mb Thermal Resistance, Junction to mouting base 3.12 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W |
Podobny numer części - CS684TO3 |
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Podobny opis - CS684TO3 |
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