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1PS66SB82 Arkusz danych(PDF) 2 Page - NXP Semiconductors |
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1PS66SB82 Arkusz danych(HTML) 2 Page - NXP Semiconductors |
2 / 10 page 1PS66SB82_1PS88SB82_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 January 2010 2 of 10 NXP Semiconductors 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 3. Pinning Pin Description Simplified outline Symbol 1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1) 001aab555 6 4 5 1 3 2 6 1 5 2 4 3 sym046 Table 4. Ordering information Type number Package Name Description Version 1PS66SB82 - plastic surface mounted package; 6 leads SOT666 1PS88SB82 SC-88 plastic surface mounted package; 6 leads SOT363 Table 5. Marking codes Type number Marking code 1PS66SB82 N5 1PS88SB82 E1* Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR continuous reverse voltage - 15 V IF continuous forward current - 30 mA Tj junction temperature - 125 °C Tamb ambient temperature −65 +125 °C Tstg storage temperature −65 +150 °C |
Podobny numer części - 1PS66SB82 |
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Podobny opis - 1PS66SB82 |
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