BTB1216J3 datasheet(1/7 Pages) CYSTEKEC

Numer części	BTB1216J3

Szczegółowy opis	PNP Epitaxial Planar High Current (High Performance) Transistor

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Producent	CYSTEKEC [Cystech Electonics Corp.]

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CYStech Electronics Corp.

Spec. No. : C811J3

Issued Date : 2008.12.10

Revised Date : 2009.02.04

Page No. : 1/7

BTB1216J3

CYStek Product Specification

PNP Epitaxial Planar High Current (High Performance) Transistor

BTB1216J3

BVCEO

-140V

IC

-4A

RCE(SAT)

90mΩ typ.

Features

• 4 Amps continuous current, up to 10 Amps peak current

• Very low saturation voltage

• Excellent gain characteristics specified up to 3 Amps

• Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A

• RoHS compliant package

Symbol

Outline

Absolute Maximum Ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

-180

V

Collector-Emitter Voltage

VCEO

-140

V

Emitter-Base Voltage

VEBO

-6

V

Continuous Collector Current

IC

-4

A

Peak Collector Current

ICP

-10 (Note 1)

A

Base Current

IB

-1

A

Power Dissipation @TA=25

°C

1

Power Dissipation @TC=25

°C

Pd

20

W

Operating and Storage Temperature Range

Tj ; Tstg

-55 ~ +150

°C

Note: 1.Single pulse, Pw≤10ms

BTB1216J3

TO-252

B：Base

C：Collector

B

C

E

E：Emitter

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