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TIP31CE3 Arkusz danych(PDF) 1 Page - Cystech Electonics Corp. |
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TIP31CE3 Arkusz danych(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C609E3 Issued Date : 2003.09.04 Revised Date : Page No. : 1/4 TIP31CE3 CYStek Product Specification 3A NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features • Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A • High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) • High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 3 Collector Current (Pulse) ICP 5 (Note 1) A Base Current IB 1 A Power Dissipation @ TA=25℃ PD 2 Power Dissipation @ TC=25℃ PD 40 W Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W Thermal Resistance, Junction to Case RθJC 3.125 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. TIP31CE3 TO-220AB B:Base C:Collector E:Emitter B C E |
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