2SAR512P datasheet(3/5 Pages) ROHM

Numer części	2SAR512P

Szczegółowy opis	Medium Power Transistors (−30V / −2A)

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Producent	ROHM [Rohm]

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2009.10 - Rev.A

Data Sheet

2SAR512P

Electrical characteristic curves

-0.01

-0.1

-1

-10

-0.1

-1

-10

-100

Single pulse

DC Ta=25 C

(Mounted on a

recommended land)

100ms

10ms

1ms

10

100

1000

-1

-10

-100

-1000

-10000

Ta=25 C

VCE= -5V

-2V

-1

-10

-100

-1000

-10000

-1.5

-1

-0.5

0

VCE= -2V

Ta=125 C

75 C

25 C

-40 C

1

10

100

1000

-0.1

-1

-10

-100

COLLECTOR - BASE VOLTAGE : VCB (V)

EMITTER - BASE VOLTAGE : VEB (V)

Ta=25 C

f=1MHz

IE=0A

IC=0A

Cob

Cib

-0.001

-0.01

-0.1

-1

-10

-100

-1000

-10000

IC / IB=20

Ta=125 C

75 C

25 C

-40 C

-0.001

-0.01

-0.1

-1

-10

-100

-1000

-10000

COLLECTOR CURRENT : IC[mA]

Ta=25 C

IC/IB=50

20

10

100

1000

-1

-10

-100

-1000

-10000

VCE= -2V

Ta=125 C

75 C

25 C

-40 C

-0.50

-0.45

-0.40

-0.35

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

-2.0

-1.5

-1.0

-0.5

0.0

-2.5mA

-2.0mA

-1.5mA

-1.0mA

-0.5mA

-3.0mA

-5.0mA

10

100

1000

10

100

1000

EMITTER CURRENT : IE[mA]

Ta=25 C

VCE=-10V

COLECTOR TO EMITTER VOLTAGE : VCE[V]

Fig.1 Typical Output Characteristics

COLLECTOR CURRENT : IC[mA]

COLLECTOR CURRENT : I C[mA]

Fig8. Gain Bandwidth Product vs.

Emitter Current

COLLECTOR TO EMITTER VOLTAGE : VCE(V)

BASE TO EMITTER VOLTAGE : VBE[V]

Fig.9 Safe Operating Area

Fig.7 Emitter Input Capacitance

vs. Emitter-Base Voltage

Collector Output Capacitance

vs. Collector-Base Voltage

Fig.6 Ground Emitter Propagation

Characteristics

COLLECTOR CURRENT : IC[mA]

C

DC Ta=25

(Mounted on a ceramic board)

Fig2. DC Current Gain

vs. Collector Current ( )

Ι

Fig3. DC Current Gain

vs.Collector Current ( )

ΙΙ

Fig4. Collector-Emitter Saturation Voltage

vs. Collector Current ( )

Ι

Fig5. Collector-Emitter Saturation Voltage

vs. Collector Current ( )

ΙΙ

Podobny numer części - 2SAR512P

Producent	Numer części	Arkusz danych	Szczegółowy opis
Rohm	2SAR512P	439Kb / 8P	PNP -2.0A -30V Middle Power Transistor
	2SAR512P5	1Mb / 9P	Medium Power Transistors(-30V/-2A)
	2SAR512PFRA	1Mb / 8P	Middle Power Transistor(-30V/-2A)

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Podobny opis - 2SAR512P

Producent	Numer części	Arkusz danych	Szczegółowy opis
Rohm	MP6T2	112Kb / 4P	Medium Power Transistor (−32V, −2A)
	2SB1561	175Kb / 3P	Medium Power Transistor (−60V, −2A)
	2SB1427	69Kb / 3P	Power transistor (−20V, −2A)
	2SB1580	78Kb / 3P	Power Transistor (−100V , −2A)
	RSS090P03	85Kb / 5P	Switching (−30V, −9.0A)
Comset Semiconductor	BSV15	81Kb / 4P	MEDIUM POWER TRANSISTORS
Rohm	SP8J4	66Kb / 5P	Switching (−30V, −2.0A)
STMicroelectronics	STF817	57Kb / 5P	PNP MEDIUM POWER TRANSISTORS
NXP Semiconductors	BSR40	41Kb / 8P	NPN medium power transistors 1999 Apr 28
NXP Semiconductors	BSX45	53Kb / 8P	NPN medium power transistors 1997 Apr 23

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