FQD1N60C datasheet(3/9 Pages) FAIRCHILD

Numer części	FQD1N60C

Szczegółowy opis	600V N-Channel MOSFET

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Producent	FAIRCHILD [Fairchild Semiconductor]

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Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

-2

10

-1

10

0

V

GS

Top :

15.0V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom: 4.5V

※

Notes :

1. 250μ s PulseTest

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

24

68

10

-1

10

0

150

oC

25

oC

-55

oC

※

Notes :

1. V

DS = 40V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

0.0

0.5

1.0

1.5

2.0

2.5

0

5

10

15

20

25

30

V

GS = 20V

V

GS = 10V

※

Note: T

J = 25

℃

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

150℃

※

Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

123

456

0

2

4

6

8

10

12

V

DS = 300V

V

DS = 120V

V

DS = 480V

※

Note: I

D = 1A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

50

100

150

200

250

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※

Notes ;

1. V

GS = 0 V

2. f =1MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Rev. A1, October 2008

Rev. A1, January 2009

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