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UF1008F Arkusz danych(PDF) 1 Page - Won-Top Electronics |
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1 / 3 page UF1000F – UF1008F 1 of 3 © 2002 Won-Top Electronics UF1000F – UF1008F 10A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction B ! Ultra-Fast Switching ! High Current Capability C ! Low Reverse Leakage Current ! High Surge Current Capability G A ! Plastic Material has UL Flammability Classification 94V-O PIN1 2 D Mechanical Data F E ! Case: ITO-220A Full Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 ! Polarity: See Diagram I ! Weight: 2.24 grams (approx.) L ! Mounting Position: Any H ! Marking: Type Number PIN 1 + J PIN 2 - K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol UF 1000F UF 1001F UF 1002F UF 1003F UF 1004F UF 1006F UF 1008F Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 300 400 600 800 V RMS Reverse Voltage VR(RMS) 35 70 140 210 280 420 560 V Average Rectified Output Current @TC = 100°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 10A VFM 1.0 1.3 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 125°C IRM 10 500 µA Reverse Recovery Time (Note 1) trr 50 100 nS Typical Junction Capacitance (Note 2) Cj 80 50 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS ITO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74Ø 3.91Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm |
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