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SS8117GT633TB Arkusz danych(PDF) 2 Page - Silicon Standard Corp. |
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SS8117GT633TB Arkusz danych(HTML) 2 Page - Silicon Standard Corp. |
2 / 6 page www.SiliconStandard.com 2 of 6 ABSOLUTE MAXIMUM RATINGS (Note 1) Input Voltage………………………………………………………………………………………….…7V Power Dissipation Internally Limited (Note 2) Maximum Junction Temperature…...…………………………………………………………….…..150°C Storage Temperature Range…..……………………………………….................…………..-65°C ≤ T J ≤+150°C Reflow Temperature (soldering, 10secs) SOT 223 Package…….……………………………………………………….....…..…………....260°C Continuous Power Dissipation (TA = +25°C) SOT 223 (1) ……………………...……………………………………………………………………..0.8W Note (1): See Recommended Minimum Footprint OPERATING CONDITIONS (Note 1) (VIN-VADJ) Voltage………..……………………………………………….......……………….……2.5V~6.5V Temperature Range…………………………………………………………...............….……..-40°C ≤ T J ≤85°C ELECTRICAL CHARACTERISTICS Operating Conditions: VIN ≤ 6.5V, TJ = 25°C unless otherwise specified. [Note3] PARAMETER CONDITIONS MIN TYP MAX UNITS Reference Voltage VIN - VOUT = 2V, IOUT = 10mA 1.225 1.250 1.275 V Line Regulation (VOUT + 1.5V) < VIN < 6.5V, IOUT = 10mA 1.32 % Load Regulation (VIN - VOUT) = 2V, 10mA < IOUT < 800mA 0.04 % Dropout Voltage ∆V OUT = 2%, IOUT = 800mA 1.2 1.3 V Current Limit (VIN - VOUT) = 2V 1000 1200 mA Adjust Pin Current Change VIN - VOUT = 2V, 10mA < IOUT < 1mA 0.15 µA Minimum Load Current 1.5V < (VIN - VOUT) < 5.25V 10 mA Quiescent Current VIN - VOUT = 2V 80 µA Ripple Rejection f = 120Hz, COUT = 10µF Tantalum, (VIN - VOUT) = 3V, IOUT = 800mA 50 dB Thermal Regulation TA = 25°C, 30ms pulse 0.004 0.02 %/W Temperature Stability VIN = 4V, IO =10mA 0.3 % RMS Output Noise (% of VOUT) TA = 25°C, 10Hz < f < 10kHz, ILOAD = 10mA 0.007 % Thermal Resistance,Junction-to-Ambient (No heat sink; No air flow) SOT-223; Recommended Minimum Footprint 156 °C/W Thermal Shutdown Junction Temperature 150 °C Thermal Shutdown Hysteresis 10 °C Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions are conditions under which the device functions but the specifications might not be guaranteed. For guaran- teed specifications and test conditions see the Electrical Characteristics. Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal re- s istance, θ JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient te m- perature is Tjmax-TA / θJA. If this dissipation is exceeded, the die temperature will rise above 150°C and the IC will go into thermal shutdown. For the SS8117G in SOT 223 package, θ JA is 156°C/W (See recommended minimum footprint). For safe operation in SOT 223 package, see “Typical Performance Characteristics” (Safe Operating Area). Note3: Low duty cycle pulse techniques are used during test to maintain junction te mperature as close to SS8117G 5/26/2005 Rev.2.2 ambient temperature as possible. Note4: The output capacitor should be tantalum or aluminum . ∆V OUT = 2%, IOUT = 1A 1.3 1.4 V |
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