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BF620 Arkusz danych(PDF) 1 Page - Zetex Semiconductors |
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BF620 Arkusz danych(HTML) 1 Page - Zetex Semiconductors |
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1 / 1 page SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 PARTMARKING DETAIL – DC ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 100 mA Continuous Collector Current IC 50 mA Power Dissipation at Tamb=25°C Ptot 1W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA, IC=0 Collector Cut-Off Current ICBO 10 20 nA µA VCB=200V, IE=0 VCB=200V, IE=0 † Colector Cut-Off Current ICER 50 10 nA µA VCE=200V, RBE=2.7KΩ VCE=200V, RBE=2.7KΩ † Emitter Cut-Off Current IEBO 10 µA VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC=30mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=20mA, IB=2mA* Static Forward Current Transfer Ratio hFE 50 IC=25mA, VCE=20V* Transition Frequency fT 100 Typical MHz IC=10mA, VCE=10V f=100MHz Output Capacitance Cobo 0.8 Typical pF VCB=30V, f=1MHz †Tamb=150°C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA42 datasheet. BF620 C C B E SOT89 TBA |
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