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2PB709ART Arkusz danych(PDF) 4 Page - NXP Semiconductors |
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2PB709ART Arkusz danych(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 2PB709ART_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 19 March 2007 4 of 10 NXP Semiconductors 2PB709ART 45 V, 100 mA PNP general-purpose transistor 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values 006aaa991 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 102 10 103 Zth(j-a) (K/W) 1 0.75 0.50 0.33 0.20 0.01 0.10 0.05 0.02 0 δ = 1 Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −45 V; IE =0A - - −10 nA VCB = −45 V; IE =0A; Tj = 150 °C -- −5 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −10 nA hFE DC current gain VCE = −10 V; IC = −2mA 210 - 340 VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −10 mA [1] -- −500 mV fT transition frequency VCE = −10 V; IC = −1 mA; f = 100 MHz 70 - - MHz Cc collector capacitance VCB = −10 V; IE =ie =0A; f=1MHz --5 pF |
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