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74ABT823PW Arkusz danych(PDF) 6 Page - NXP Semiconductors

Numer części 74ABT823PW
Szczegółowy opis  9-bit D-type flip-flop with reset and enable; 3-state
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

74ABT823PW Arkusz danych(HTML) 6 Page - NXP Semiconductors

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74ABT823_3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 23 March 2010
6 of 17
NXP Semiconductors
74ABT823
9-bit D-type flip-flop with reset and enable; 3-state
8.
Recommended operating conditions
9.
Static characteristics
Table 5.
Operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
4.5
-
5.5
V
VI
input voltage
0
-
VCC
V
VIH
HIGH-level input voltage
2.0
-
-
V
VIL
LOW-level Input voltage
-
-
0.8
V
IOH
HIGH-level output current
−32
-
-
mA
IOL
LOW-level output current
-
-
64
mA
Δt/ΔV
input transition rise and fall rate
0
-
5
ns/V
Tamb
ambient temperature
in free air
−40
-
+85
°C
Table 6.
Static characteristics
Symbol
Parameter
Conditions
25
°C
−40 °C to +85 °C Unit
Min
Typ
Max
Min
Max
VIK
input clamping voltage VCC = 4.5 V; IIK = −18 mA
−1.2
−0.9
-
−1.2
-
V
VOH
HIGH-level output
voltage
VI = VIL or VIH
VCC = 4.5 V; IOH = −3 mA
2.5
2.9
-
2.5
-
V
VCC = 5.0 V; IOH = −3 mA
3.0
3.4
-
3.0
-
V
VCC = 4.5 V; IOH = −32 mA
2.0
2.4
-
2.0
-
V
VOL
LOW-level output
voltage
VCC = 4.5 V; IOL = 64 mA;
VI = VIL or VIH
-
0.42
0.55
-
0.55
V
VOL(pu)
power-up LOW-level
output voltage
VCC = 5.5 V; IO = 1 mA;
VI = GND or VCC
[1]
-
0.13
0.55
-
0.55
V
II
input leakage current
VCC = 5.5 V; VI = VCC or GND
-
±0.01 ±1.0
-
±1.0
μA
IOFF
power-off leakage
current
VCC = 0 V; VI or VO ≤ 4.5 V
-
±5.0 ±100
-
±100
μA
IO(pu/pd)
power-up/power-down
output current
VCC = 2.0 V; VO = 0.5 V;
VI = GND or VCC; OE HIGH
[2]
-
±5.0
±50
-
±50
μA
IOZ
OFF-state output
current
VCC = 5.5 V; VI = VIL or VIH
VO = 2.7 V
-
5.0
50
-
50
μA
VO = 0.5 V
-
−5.0
−50
-
−50
μA
ILO
output leakage current HIGH-state; VO = 5.5 V;
VCC = 5.5 V; VI = GND or VCC
-
5.0
50
-
50
μA
IO
output current
VCC = 5.5 V; VO = 2.5 V
[3]
−180
−50
−50
−180
−50
mA
ICC
supply current
VCC = 5.5 V; VI = GND or VCC
outputs HIGH-state
-
0.5
250
-
250
μA
outputs LOW-state
-
27
34
-
34
mA
outputs disabled
-
0.5
250
-
250
μA


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