74AVC1T45GW datasheet(9/21 Pages) NXP

Numer części	74AVC1T45GW

Szczegółowy opis	Dual supply translating transceiver; 3-state

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74AVC1T45_2

Product data sheet

Rev. 02 — 5 May 2009

9 of 21

NXP Semiconductors

74AVC1T45

Dual supply translating transceiver; 3-state

11. Dynamic characteristics

[1]

tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.

ten is a calculated value using the formula shown in Section 13.4 “Enable times”

[1]

tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.

ten is a calculated value using the formula shown in Section 13.4 “Enable times”

[1]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL × VCC2 × fo) = sum of the outputs.

[2]

fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = ∞Ω.

Table 8.

Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 °C [1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6

Symbol Parameter

Conditions

VCC(B)

Unit

0.8 V

1.2 V

1.5 V

1.8 V

2.5 V

3.3 V

tpd

propagation delay

A to B

15.5

8.1

7.6

7.7

8.4

9.2

ns

B to A

15.5

12.7

12.3

12.2

12.0

11.8

ns

tdis

disable time

DIR to A

12.2

ns

DIR to B

11.7

7.9

7.6

8.2

8.7

10.2

ns

ten

enable time

DIR to A

27.2

20.6

19.9

20.4

20.7

22.0

ns

DIR to B

27.7

20.3

19.8

19.9

20.6

21.4

ns

Table 9.

Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 °C [1]

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6

Symbol Parameter

Conditions

VCC(A)

Unit

0.8 V

1.2 V

1.5 V

1.8 V

2.5 V

3.3 V

tpd

propagation delay

A to B

15.5

12.7

12.3

12.2

12.0

11.8

ns

B to A

15.5

8.1

7.6

7.7

8.4

9.2

ns

tdis

disable time

DIR to A

12.2

4.9

3.8

3.7

2.8

3.4

ns

DIR to B

11.7

9.2

9.0

8.8

8.7

8.6

ns

ten

enable time

DIR to A

27.2

17.3

16.6

16.5

17.1

17.8

ns

DIR to B

27.7

17.6

16.1

15.9

14.8

15.2

ns

Table 10.

Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 °C [1][2]

Voltages are referenced to GND (ground=0V).

Symbol Parameter

Conditions

VCC(A) and VCC(B)

Unit

0.8 V

1.2 V

1.5 V

1.8 V

2.5 V

3.3 V

CPD

power dissipation

capacitance

A port: (direction A to B);

B port: (direction B to A)

122222

pF

A port: (direction B to A);

B port: (direction A to B)

9

1111121417

pF

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