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74HCT1G02 Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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74HCT1G02 Arkusz danych(HTML) 5 Page - NXP Semiconductors |
5 / 10 page 74HC_HCT1G02_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 11 July 2007 5 of 10 NXP Semiconductors 74HC1G02; 74HCT1G02 2-input NOR gate 11. Dynamic characteristics [1] tpd is the same as tPLH and tPHL. [2] CPD is used to determine the dynamic power dissipation PD (µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts ∑ (C L × VCC 2 × f o) = sum of outputs 12. Waveforms Table 8. Dynamic characteristics GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb =25 °C. For test circuit see Figure 6 Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max For type 74HC1G02 tpd propagation delay A and B to Y; see Figure 5 [1] VCC = 2.0 V; CL = 50 pF - 25 115 - 135 ns VCC = 4.5 V; CL =50pF - 9 23 - 27 ns VCC = 5.0 V; CL =15pF - 7 - - - ns VCC = 6.0 V; CL =50pF - 8 20 - 23 ns CPD power dissipation capacitance VI = GND to VCC [2] -18- - - pF For type 74HCT1G02 tpd propagation delay A and B to Y; see Figure 5 [1] VCC = 4.5 V; CL = 50 pF - 11 24 - 27 ns VCC = 5.0 V; CL =15pF - 9 - - - ns CPD power dissipation capacitance VI = GND to VCC − 1.5 V [2] -19- - - pF For HC1G02: VM = 0.5 × VCC; VI = GND to VCC For HCT1G02: VM = 1.3 V; VI = GND to 3.0 V Test data is given in Table 8. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to output impedance Zo of the pulse generator. Fig 5. Input to output propagation delays Fig 6. Load circuitry for switching times mna106 A, B input Y output tPHL tPLH VM VM mna101 VCC VI VO RT CL PULSE GENERATOR DUT |
Podobny numer części - 74HCT1G02 |
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Podobny opis - 74HCT1G02 |
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