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74HCT1G14GW Arkusz danych(PDF) 9 Page - NXP Semiconductors |
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74HCT1G14GW Arkusz danych(HTML) 9 Page - NXP Semiconductors |
9 / 14 page 74HC_HCT1G14_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 17 July 2007 9 of 14 NXP Semiconductors 74HC1G14; 74HCT1G14 Inverting Schmitt trigger tf = fall time (ns); 90 % to 10 % ∆I CC(AV) = average additional supply current (µA) ∆I CC(AV) differs with positive or negative input transitions, as shown in Figure 14 and 15. 74HC1G14 and 74HCT1G14 used in relaxation oscillator circuit, see Figure 16. Remark: All values given are typical unless otherwise specified. Fig 14. ∆I CC(AV) for 74HC1G14 devices; linear change of VI between 0.1 × VCC to 0.9 × VCC Fig 15. ∆I CC(AV) for 74HCT1G14 devices; linear change of VI between 0.1 × VCC to 0.9 × VCC mna036 0 2.0 4.0 6.0 VCC (V) 200 150 50 0 100 ∆ICC(AV) ( µA) positive-going edge negative-going edge mna058 04 6 2 VCC (V) 200 100 50 150 0 ∆ICC(AV) ( µA) positive-going edge negative-going edge For 74HC1G14: For 74HCT1G14: Fig 16. Relaxation oscillator using 74HC1G14 and 74HCT1G14 mna035 R C f 1 T --- 1 0.8 RC × ---------------------- ≈ = f 1 T --- 1 0.67 RC × ------------------------- ≈ = |
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