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74HCT1G126GW Arkusz danych(PDF) 5 Page - NXP Semiconductors

Numer części 74HCT1G126GW
Szczegółowy opis  Bus buffer/line driver; 3-state
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74HCT1G126GW Arkusz danych(HTML) 5 Page - NXP Semiconductors

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74HC_HCT1G126_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 20 July 2007
5 of 12
NXP Semiconductors
74HC1G126; 74HCT1G126
Bus buffer/line driver; 3-state
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2]
CPD is used to determine the dynamic power dissipation PD (µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (CL × VCC2 × fo) = sum of outputs
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF unless otherwise specified. All typical values are measured at Tamb =25 °C. For test
circuit see Figure 7
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
For type 74HC1G126
tpd
propagation delay A to Y; see Figure 5
[1]
VCC = 2.0 V
-
24
125
-
150
ns
VCC = 4.5 V
-
10
25
-
30
ns
VCC = 5.0 V; CL =15pF
-
9
-
-
-
ns
VCC = 6.0 V
-
9
21
-
26
ns
ten
enable time
OE to Y; see Figure 6
[1]
VCC = 2.0 V
-
24
155
-
190
ns
VCC = 4.5 V
-
10
31
-
38
ns
VCC = 6.0 V
-
8
26
-
32
ns
tdis
disable time
OE to Y; see Figure 6
[1]
VCC = 2.0 V
-
16
155
-
190
ns
VCC = 4.5 V
-
12
31
-
38
ns
VCC = 6.0 V
-
11
26
-
32
ns
CPD
power dissipation
capacitance
VI = GND to VCC
[2]
-30-
-
-
pF
For type 74HCT1G126
tpd
propagation delay A to Y; see Figure 5
[1]
VCC = 4.5 V
-
11
30
-
36
ns
VCC = 5.0 V; CL =15pF
-
10
-
-
-
ns
ten
enable time
OE to Y; see Figure 6; VCC = 4.5 V
[1]
-
10
35
-
42
ns
tdis
disable time
OE to Y; see Figure 6; VCC = 4.5 V
[1]
-
12
31
-
38
ns
CPD
power dissipation
capacitance
VI = GND to VCC − 1.5 V
[2]
-27-
-
-
pF


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