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74HCT1G126GV Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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74HCT1G126GV Arkusz danych(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 74HC_HCT1G126_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 20 July 2007 5 of 12 NXP Semiconductors 74HC1G126; 74HCT1G126 Bus buffer/line driver; 3-state 11. Dynamic characteristics [1] tpd is the same as tPLH and tPHL. ten is the same as tPZL and tPZH. tdis is the same as tPLZ and tPHZ. [2] CPD is used to determine the dynamic power dissipation PD (µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts ∑ (CL × VCC2 × fo) = sum of outputs Table 8. Dynamic characteristics GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF unless otherwise specified. All typical values are measured at Tamb =25 °C. For test circuit see Figure 7 Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max For type 74HC1G126 tpd propagation delay A to Y; see Figure 5 [1] VCC = 2.0 V - 24 125 - 150 ns VCC = 4.5 V - 10 25 - 30 ns VCC = 5.0 V; CL =15pF - 9 - - - ns VCC = 6.0 V - 9 21 - 26 ns ten enable time OE to Y; see Figure 6 [1] VCC = 2.0 V - 24 155 - 190 ns VCC = 4.5 V - 10 31 - 38 ns VCC = 6.0 V - 8 26 - 32 ns tdis disable time OE to Y; see Figure 6 [1] VCC = 2.0 V - 16 155 - 190 ns VCC = 4.5 V - 12 31 - 38 ns VCC = 6.0 V - 11 26 - 32 ns CPD power dissipation capacitance VI = GND to VCC [2] -30- - - pF For type 74HCT1G126 tpd propagation delay A to Y; see Figure 5 [1] VCC = 4.5 V - 11 30 - 36 ns VCC = 5.0 V; CL =15pF - 10 - - - ns ten enable time OE to Y; see Figure 6; VCC = 4.5 V [1] - 10 35 - 42 ns tdis disable time OE to Y; see Figure 6; VCC = 4.5 V [1] - 12 31 - 38 ns CPD power dissipation capacitance VI = GND to VCC − 1.5 V [2] -27- - - pF |
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