74HCT2G86GD datasheet(6/14 Pages) NXP

Numer części	74HCT2G86GD

Szczegółowy opis	Dual 2-input exclusive-OR gate

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Producent	NXP [NXP Semiconductors]

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6 / 14 page

74HC_HCT2G86_3

Product data sheet

Rev. 03 — 7 May 2009

6 of 14

NXP Semiconductors

74HC2G86; 74HCT2G86

Dual 2-input exclusive-OR gate

11. Dynamic characteristics

[1]

tpd is the same as tPLH and tPHL.

[2]

tt is the same as tTLH and tTHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

2

× f

o) = sum of the outputs.

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.

Symbol Parameter

Conditions

25

°C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min

Typ

Max

Min

Max

Min

Max

74HC2G86

tpd

propagation

delay

nA, nB to nY; see Figure 6

[1]

VCC = 2.0 V

-

34

120

-

150

-

180

ns

VCC = 4.5 V

-

11

20

-

25

-

36

ns

VCC = 6.0 V

-

9.0

17

-

21

-

30

ns

tt

transition

time

nY; see Figure 6

[2]

VCC = 2.0 V

-

18

75

-

95

-

110

ns

VCC = 4.5 V

-

6

15

-

19

-

22

ns

VCC = 6.0 V

5

13

-

16

-

20

ns

CPD

power

dissipation

capacitance

per buffer;

CL = 50 pF; fi = 1 MHz;

VI = GND to VCC

[3]

-10-

-

pF

74HCT2G86

tpd

propagation

delay

nA, nB to nY; see Figure 6

[1]

VCC = 4.5 V

-

11

19

-

23

-

48

ns

tt

transition

time

nY; see Figure 6

[2]

VCC = 4.5 V

-

6

15

-

19

-

22

ns

CPD

power

dissipation

capacitance

per buffer;

CL = 50 pF; fi = 1 MHz;

VI = GND to VCC

[3]

-9-

-

pF

Podobny numer części - 74HCT2G86GD

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