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74HCT11 Arkusz danych(PDF) 6 Page - NXP Semiconductors

Numer części 74HCT11
Szczegółowy opis  Triple 3-input AND gate
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74HCT11 Arkusz danych(HTML) 6 Page - NXP Semiconductors

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74HC_HCT11_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 25 March 2010
6 of 15
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
[1]
tpd is the same as tPHL and tPLH.
[2]
tt is the same as tTHL and tTLH.
[3]
CPD is used to determine the dynamic power dissipation (PD in μW):
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑ (C
L × VCC
2
× f
o) = sum of outputs.
11. Waveforms
74HCT11
tpd
propagation delay
nA, nB to nY; see Figure 6
[1]
VCC = 4.5 V
-
16
24
30
36
ns
VCC = 5.0 V; CL = 15 pF
-
11
-
-
-
ns
tt
transition time
VCC = 4.5 V; see Figure 6
[2]
-
7
15
19
22
ns
CPD
power dissipation
capacitance
per package;
VI = GND to VCC − 1.5 V
[3]
-
20
-
-
-
pF
Table 7.
Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
25
°C
−40 °C to +125 °C Unit
Min
Typ
Max
Max
(85
°C)
Max
(125
°C)
Measurement points are given in Table 9.
VOL and VOH are typical voltage output levels that occur with the output load.
Fig 6.
Input to output propagation delays
001aal409
VI
VOH
tPHL
tTHL
tTLH
tPLH
VOL
GND
nA, nB, nC input
nY output
VM
VM
VY
VX
Table 8.
Measurement points
Type
Input
Output
VM
VM
VX
VY
74HC11
0.5VCC
0.5VCC
0.1VCC
0.9VCC
74HCT11
1.3 V
1.3 V
0.1VCC
0.9VCC


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