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74HC27BQ Arkusz danych(PDF) 7 Page - NXP Semiconductors

Numer części 74HC27BQ
Szczegółowy opis  Triple 3-input NOR gate
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Logo NXP - NXP Semiconductors

74HC27BQ Arkusz danych(HTML) 7 Page - NXP Semiconductors

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74HC_HCT27_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 7 January 2008
7 of 16
NXP Semiconductors
74HC27; 74HCT27
Triple 3-input NOR gate
[1]
tpd is the same as tPHL and tPLH.
[2]
tt is the same as tTHL and tTLH.
[3]
CPD is used to determine the dynamic power dissipation (PD in µW):
PD =CPD × VCC2 × fi × N+ ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑ (C
L × VCC
2
× f
o) = sum of outputs.
11. Waveforms
CPD
power dissipation
capacitance
per package; VI = GND to VCC
[3]
-24-
-
-
pF
74HCT27
tpd
propagation delay
nA, nB, nC to nY; see Figure 6
[1]
VCC = 4.5 V
-
12
21
26
32
ns
VCC = 5.0 V; CL =15pF
-
10
-
-
-
ns
tt
transition time
VCC = 4.5 V; see Figure 6
[2]
-
7
15
19
22
ns
CPD
power dissipation
capacitance
per package;
VI = GND to VCC − 1.5 V
[3]
-30-
-
-
pF
Table 7.
Dynamic characteristics type 74HC27; 74HCT27
GND = 0 V; for load circuit see Figure 7.
Symbol Parameter
Conditions
25
°C
−40 °C to +125 °C Unit
Min
Typ
Max
Max
(85
°C)
Max
(125
°C)
Measurement points are given in Table 8.
VOL and VOH are typical voltage output drop that occur with the output load.
Fig 6.
Input (nA, nB, nC) to output (nY) propagation delays and output transition times
001aag761
nA, nB, nC input
VI
GND
VOH
VOL
nY output
tTHL
tTLH
VM
VM
VX
VY
tPHL
tPLH
Table 8.
Measurement points
Type
Input
Output
VM
VM
VX
VY
74HC27
0.5VCC
0.5VCC
0.1VCC
0.9VCC
74HCT27
1.3 V
1.3 V
0.1VCC
0.9VCC


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