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74HCT154DB Arkusz danych(PDF) 10 Page - NXP Semiconductors |
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74HCT154DB Arkusz danych(HTML) 10 Page - NXP Semiconductors |
10 / 21 page 74HC_HCT154_6 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 06 — 12 February 2007 10 of 21 NXP Semiconductors 74HC154; 74HCT154 4-to-16 line decoder/demultiplexer 10. Dynamic characteristics [1] tpd is the same as tPLH and tPHL [2] tt is the same as tTLH and tTHL [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. Table 8. Dynamic characteristics GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit, see Figure 9. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ Max Min Max (85 °C) Max (125 °C) 74HC154 tpd propagation delay An to Yn; see Figure 7 [1] VCC = 2.0 V - 36 150 - 190 225 ns VCC = 4.5 V - 13 30 - 38 45 ns VCC = 5 V; CL = 15 pF - 11 - - - - ns VCC = 6.0 V - 10 26 - 33 38 ns En to Yn; see Figure 8 VCC = 2.0 V - 39 150 - 190 225 ns VCC = 4.5 V - 14 30 - 38 45 ns VCC = 5 V; CL = 15 pF - 11 - - - - ns VCC = 6.0 V - 11 26 - 33 38 ns tt transition time see Figure 7 and 8 [2] VCC = 2.0 V - 19 75 - 95 110 ns VCC = 4.5 V - 7 15 - 19 22 ns VCC = 6.0 V - 6 13 - 16 19 ns CPD power dissipation capacitance per gate; VI = GND to VCC [3] - 60 - - --pF 74HCT154 tpd propagation delay An to Yn; see Figure 7 [1] VCC = 4.5 V - 16 35 - 44 53 ns VCC = 5 V; CL = 15 pF - 13 - - - - ns En to Yn; see Figure 8 VCC = 4.5 V - 15 32 - 40 48 ns VCC = 5 V; CL = 15 pF - 13 - - - - ns tt transition time see Figure 7 and 8 [2] VCC = 4.5 V - 7 15 - 19 22 ns CPD power dissipation capacitance per gate; VI = GND to (VCC − 1.5 V) [3] - 60 - - --pF |
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