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74HCT238DB Arkusz danych(PDF) 7 Page - NXP Semiconductors |
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74HCT238DB Arkusz danych(HTML) 7 Page - NXP Semiconductors |
7 / 18 page 74HC_HCT238_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 16 July 2007 7 of 18 NXP Semiconductors 74HC238; 74HCT238 3-to-8 line decoder/demultiplexer 10. Dynamic characteristics ICC supply current VI =VCC or GND; VCC = 5.5 V; IO =0A - - 8.0 - 80 - 160 µA ∆ICC additional supply current per input pin; VI =VCC − 2.1 V; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V; IO =0A An inputs - 70 252 - 315 - 343 µA E1, E2 inputs - 40 144 - 180 - 196 µA E3 input - 145 522 - 653 - 711 µA CI input capacitance - 3.5 - - - - - pF Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max Table 7. Dynamic characteristics GND = 0 V; test circuit see Figure 8. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Min Typ Max Max (85 °C) Max (125 °C) Unit 74HC238 tpd propagation delay An to Yn; see Figure 6 [1] VCC = 2.0 V - 47 150 190 225 ns VCC = 4.5 V - 17 30 38 45 ns VCC = 5.0 V; CL =15pF - 14 - - - ns VCC = 6.0 V - 14 26 33 38 ns E3 to Yn; see Figure 6 [1] VCC = 2.0 V - 52 160 200 240 ns VCC = 4.5 V - 19 32 40 48 ns VCC = 5.0 V; CL =15pF - 16 - - - ns VCC = 6.0 V - 15 27 34 41 ns En to Yn or see Figure 7 [1] VCC = 2.0 V - 50 155 195 235 ns VCC = 4.5 V - 18 31 39 47 ns VCC = 5.0 V; CL =15pF - 17 - - - ns VCC = 6.0 V - 14 26 33 40 ns tt transition time see Figure 6 and Figure 7 [2] VCC = 2.0 V - 19 75 95 110 ns VCC = 4.5 V - 7 15 19 22 ns VCC = 6.0 V - 6 13 16 19 ns CPD power dissipation capacitance per package; VI = GND to VCC [3] -72- - - pF |
Podobny numer części - 74HCT238DB |
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Podobny opis - 74HCT238DB |
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