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74HCT366D Arkusz danych(PDF) 9 Page - NXP Semiconductors |
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74HCT366D Arkusz danych(HTML) 9 Page - NXP Semiconductors |
9 / 19 page 74HC_HCT366_3 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 03 — 21 November 2006 9 of 19 NXP Semiconductors 74HC366; 74HCT366 Hex buffer/line driver; 3-state; inverting tdis disable time OEn to nY; see Figure 7 [3] VCC = 2.0 V - 55 150 ns VCC = 4.5 V - 20 30 ns VCC = 6.0 V - 16 26 ns tt transition time see Figure 6 [4] VCC = 2.0 V - 14 60 ns VCC = 4.5 V - 5 12 ns VCC = 6.0 V - 4 10 ns CPD power dissipation capacitance per buffer; VI = GND to VCC [5] -30 - pF Tamb = −40 °C to +85 °C tpd propagation delay nA to nY; see Figure 6 [1] VCC = 2.0 V - - 125 ns VCC = 4.5 V - - 25 ns VCC = 6.0 V - - 21 ns ten enable time OEn to nY; see Figure 7 [2] VCC = 2.0 V - - 190 ns VCC = 4.5 V - - 38 ns VCC = 6.0 V - - 33 ns tdis disable time OEn to nY; see Figure 7 [3] VCC = 2.0 V - - 190 ns VCC = 4.5 V - - 38 ns VCC = 6.0 V - - 33 ns tt transition time see Figure 6 [4] VCC = 2.0 V - - 75 ns VCC = 4.5 V - - 15 ns VCC = 6.0 V - - 13 ns Tamb = −40 °C to +125 °C tpd propagation delay nA to nY; see Figure 6 [1] VCC = 2.0 V - - 150 ns VCC = 4.5 V - - 30 ns VCC = 6.0 V - - 26 ns ten enable time OEn to nY; see Figure 7 [2] VCC = 2.0 V - - 225 ns VCC = 4.5 V - - 45 ns VCC = 6.0 V - - 38 ns tdis disable time OEn to nY; see Figure 7 [3] VCC = 2.0 V - - 225 ns VCC = 4.5 V - - 45 ns VCC = 6.0 V - - 38 ns Table 8. Dynamic characteristics 74HC366 …continued Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; see test circuit Figure 8. Symbol Parameter Conditions Min Typ Max Unit |
Podobny numer części - 74HCT366D |
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Podobny opis - 74HCT366D |
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