BAS116 datasheet(3/8 Pages) NXP

Numer części	BAS116

Szczegółowy opis	Low-leakage diode

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Producent	NXP [NXP Semiconductors]

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3 / 8 page

2003 Dec 12

3

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS116

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1.

Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VF

forward voltage

see Fig.3

IF = 1 mA

−

0.9

V

IF = 10 mA

−

1

V

IF = 50 mA

−

1.1

V

IF = 150 mA

−

1.25

V

IR

reverse current

see Fig.5

VR = 75 V

0.003

5

nA

VR = 75 V; Tj = 150 °C

3

80

nA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

2

−

pF

trr

reverse recovery time

when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

0.8

3

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-tp)

thermal resistance from junction to tie-point

330

K/W

Rth(j-a)

thermal resistance from junction to ambient

note 1

500

K/W

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