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BC847BPN Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części BC847BPN
Szczegółowy opis  45 V, 100 mA NPN/PNP general-purpose transistor
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Producent  NXP [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo NXP - NXP Semiconductors

BC847BPN Arkusz danych(HTML) 2 Page - NXP Semiconductors

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BC847BPN_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 February 2009
2 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
3.
Ordering information
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BC847BPN
SC-88
plastic surface-mounted package; 6 leads
SOT363
Table 4.
Marking codes
Type number
Marking code[1]
BC847BPN
13*
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
45
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
100
mA
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
200
mA
IBM
peak base current
single pulse;
tp ≤ 1ms
-
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
220
mW
[2] -
250
mW
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
300
mW
[2] -
400
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C


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