BF1210 datasheet(11/21 Pages) NXP

Numer części	BF1210

Szczegółowy opis	Dual N-channel dual gate MOSFET

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BF1210_1

Product data sheet

Rev. 01 — 25 October 2006

11 of 21

NXP Semiconductors

BF1210

Dual N-channel dual gate MOSFET

8.1.2 Scattering parameters for ampliﬁer A

8.2 Noise data for ampliﬁer A

8.3 Dynamic characteristics for ampliﬁer B

Table 9.

Scattering parameters for ampliﬁer A

VDS(A) =5V; VG2-S =4V; ID(A) = 19 mA; VDS(B) =0V;VG1-S(B) =0V; Tamb =25 °C; typical values.

f (MHz)

s11

s21

s12

s22

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

40

0.9861

−3.2

3.14

176.75

0.00054

87.97

0.9934

−1.19

100

0.9883

−7.84

3.14

171.53

0.00104

87.69

0.9925

−2.85

200

0.9844

−15.7

3.12

163.1

0.00205

80.77

0.9918

−5.69

300

0.9761

−23.52

3.08

154.65

0.00295

76.33

0.9904

−8.51

400

0.9635

−31.26

3.03

146.33

0.00375

72.34

0.9888

−11.33

500

0.9486

−38.78

2.97

138.15

0.00437

67.97

0.9870

−14.13

600

0.9305

−46.2

2.90

130.12

0.00483

64.86

0.9847

−16.87

700

0.9105

−53.33

2.81

122.26

0.0051

62.13

0.9832

−19.61

800

0.8911

−60.2

2.73

114.65

0.0052

59.88

0.9817

−22.35

900

0.8723

−67.03

2.65

107.2

0.00515

58.8

0.9796

−25.03

1000

0.8521

−73.74

2.56

99.78

0.00498

58.03

0.9785

−27.08

Table 10.

Noise data for ampliﬁer A

VDS(A) =5V; VG2-S =4V; ID(A) = 19 mA, Tamb =25 °C; typical values.

f (MHz)

NFmin (dB)

Γopt

rn (ratio)

(ratio)

(deg)

400

0.9

0.749

23.7

0.667

800

1.2

0.688

48.65

0.583

Table 11.

Dynamic characteristics for ampliﬁer B

Common source; Tamb =25 °C; VG2-S =4V; VDS(B) =5V; ID(B) =13mA.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

|yfs|

forward transfer admittance

Tj =25 °C28

33

43

mS

Ciss(G1)

input capacitance at gate1

f = 100 MHz

[1] -

1.9

2.4

pF

Ciss(G2)

input capacitance at gate2

f = 100 MHz

[1] -

3.4

-

pF

Coss

output capacitance

f = 100 MHz

[1] -

0.85

-

pF

Crss

reverse transfer capacitance f = 100 MHz

[1] -20

-

fF

Gtr

transducer power gain

BS =BS(opt); BL =BL(opt)

[1]

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

32

36

40

dB

f = 400 MHz; GS = 2 mS; GL = 1 mS

29

33

37

dB

f = 800 MHz; GS = 3.3 mS; GL =1mS

27

31

35

dB

NF

noise ﬁgure

f = 11 MHz; GS = 20 mS; BS =0S

-

4

-

dB

f = 400 MHz; YS =YS(opt)

-

0.9

1.5

dB

f = 800 MHz; YS =YS(opt)

-

1.2

1.9

dB

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