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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ADS6424IRGCT Arkusz danych(PDF) 5 Page - Texas Instruments |
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ADS6424IRGCT Arkusz danych(HTML) 5 Page - Texas Instruments |
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5 / 71 page  www.ti.com ELECTRICAL CHARACTERISTICS ADS6424 ADS6423 ADS6422 SLAS532A – MAY 2007 – REVISED JUNE 2007 Typical values are at 25 °C, min and max values are across the full temperature range T MIN = –40°C to TMAX = 85°C, AVDD = LVDD = 3.3 V, maximum rated sampling frequency, 50% clock duty cycle, –1dBFS differential analog input, internal reference mode (unless otherwise noted). ADS6424 ADS6423 ADS6422 Fs = 105 MSPS Fs = 80 MSPS Fs = 65 MSPS PARAMETER UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX RESOLUTION 12 12 12 Bits ANALOG INPUT Differential input voltage 2.0 2.0 2.0 VPP range Differential input 7 7 7 pF capacitance Analog input bandwidth 500 500 500 MHz Analog input common 130 100 81 μA mode current (per input pin of each ADC) REFERENCE VOLTAGES VREFB Internal reference bottom 1.0 1.0 1.0 V voltage VREFT Internal reference top 2.0 2.0 2.0 V voltage ΔVREF Internal reference error, -15 ±2 15 -15 ±2 15 -15 ±2 15 mV (VREFT–VREFB) VCM Common mode output 1.5 1.5 1.5 V voltage VCM output current ±4 ±4 ±4 mA capability DC ACCURACY No missing codes Specified Specified Specified EO Offset error, across devices –15 ±2 15 –15 ±2 15 –15 ±2 15 mV and across channels within a device Offset error temperature 0.05 0.05 0.05 mV/ °C coefficient, across devices and across channels within a device There are two sources of gain error - internal reference inaccuracy and channel gain error EGREF Gain error due to internal -0.75 ±0.1 0.75 -0.75 ±0.1 0.75 -0.75 ±0.1 0.75 % FS reference inaccuracy alone, ( ΔVREF /2.0) % Reference gain error 0.0125 0.0125 0.0125 Δ%/ °C temperature coefficient EGCHAN Gain error of channel –1 ±0.3 1 –1 ±0.3 1 –1 ±0.3 1 % FS alone, across devices and across channels within a device (1) Channel gain error 0.005 0.005 0.005 Δ%/ °C temperature coefficient, across devices and across channels within a device DNL Differential nonlinearity –0.9 ±0.5 2.0 –0.9 ±0.4 1.8 –0.9 ±0.4 1.8 LSB INL Integral nonlinearity –2.2 ±1.25 2.2 –2.0 ±1.25 2.0 –2.0 ±1.0 2.0 LSB PSRR DC power supply rejection 0.5 0.5 0.5 mV/V ratio (1) This is specified by design and characterization; it is not tested in production. Copyright © 2007, Texas Instruments Incorporated 5 Submit Documentation Feedback |
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