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TPCC8009 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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TPCC8009 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCC8009 2010-01-05 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8009 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) ( VGS = 10 V) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.2 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 24 Drain current Pulsed (Note 1) IDP 72 A Drain power dissipation (Tc = 25℃) PD 27 W Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 0.7 W Single-pulse avalanche energy (Note 3) EAS 75 mJ Avalanche current IAR 24 A Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 3, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-3X1A Weight: 0.02 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN |
Podobny numer części - TPCC8009 |
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Podobny opis - TPCC8009 |
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