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2SJ360 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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2SJ360 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ360 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L 2 −π−MOSV) 2SJ360 High Speed, High current Switching Applications Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −60 V Drain−gate voltage (RGS = 20 k Ω) VDGR −60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID −1 A Drain current Pulse (Note 1) IDP −4 A Drain power dissipation PD 0.5 W Drain power dissipation (Note 2) PD 1.5 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 250 °C / W This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ⎯ JEITA SC-62 TOSHIBA 2−5K1B Weight: 0.05 g (typ.) |
Podobny numer części - 2SJ360_09 |
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Podobny opis - 2SJ360_09 |
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