2SK2615

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

2

−π−MOSV)

2SK2615

DC−DC Converter, Relay Drive and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

60

V

60

V

Gate−source voltage

±20

V

DC

(Note 1)

2

Drain current

Pulse (Note 1)

6

A

Drain power dissipation

0.5

W

Drain power dissipation

(Note 2)

1.5

W

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to

ambient

250

°C / W

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-5K1B

Weight: 0.05 g (typ.)

Z

A

Part No. (or abbreviation code)

Lot No.

Note 4

Note 4: A line to the right of a Lot No. identifies the indication of

product Labels.

Without a line: [[Pb]]/INCLUDES > MCV

With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.